(China (Mainland))
Product Summary
The L1SS400T1G is a silicon epitaxial planar switching diode.
Parametrics
L1SS400T1G absolute maximum ratings: (1)Peak reverse voltage, VRM: 90V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 225mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1s), Isurge: 500mA; (6)Junction temperature, Tj: 125℃; (7)Storage temperature, Tstg: -55 to +125℃.
Features
L1SS400T1G features: (1)Extremely small surface mounting type; (2)High Speed; (3)High reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 L1SS400T1G |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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L1SS355T1 |
Other |
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Data Sheet |
Negotiable |
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L1SS355T1G |
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Data Sheet |
Negotiable |
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L1SS356T1G |
Other |
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Data Sheet |
Negotiable |
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L1SS400CST1G |
Other |
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Data Sheet |
Negotiable |
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L1SS400GT1G |
Other |
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Data Sheet |
Negotiable |
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L1SS400T1G |
Other |
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Data Sheet |
Negotiable |
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