Product Summary
The IRF740 is a Single N-Channel HEXFET Power MOSFET. The IRF740 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF740 absolute maximum ratings: (1)Drain-Source Voltage:400V; (2)Gate-Source Voltage:±20V; (3)Continuous Drain Current:10A or 6.3A; (4)Pulsed Drain Current:40A; (5)Linear Derating Factor:1.0W/℃; (6)Single Pulse Avalanche Energy:520mJ; (7)Repetitive Avalanche Current:10A; (8)Repetitive Avalanche Energy:13mJ; (9)Maximum Power Dissipation:125W; (10)Peak Diode Recovery dV/dt:4.0V/ns; (11)Operating Junction and Storage Temperature Range:-55 to +150℃; (12)Soldering Recommendations (Peak Temperature):300℃.
Features
IRF740 features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF740 |
Vishay/Siliconix |
MOSFET N-Chan 400V 10 Amp |
Data Sheet |
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IRF740, SiHF740 |
Other |
Data Sheet |
Negotiable |
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IRF740_R4943 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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IRF7401 |
Other |
Data Sheet |
Negotiable |
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IRF7401PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7401TR |
International Rectifier |
MOSFET N-CH 20V 8.7A 8-SOIC |
Data Sheet |
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IRF7401TRPBF |
International Rectifier |
MOSFET MOSFT 20V 8.7A 22mOhm 32nC |
Data Sheet |
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IRF7402 |
International Rectifier |
MOSFET N-CH 20V 6.8A 8-SOIC |
Data Sheet |
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