IRF4905

HEXFET Power MOSFET, 55 V, 200 W, TO-220, Advanced Process Technology, Ultra Low On-Resistance

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.50~0.80 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.50~0.80

PartNumber:: IRF4905

Brand:: International Rectifier - IR | Pack: DIP | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Joy's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-12-29

From Other Seller

Part Number:IRF4905
US $0.50 - 0.80
EKY-160ELL121MF11D

US $0.10 - 1.00 / Piece
(0) Remove
YL-G709

US $65.00 - 68.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRF4905 is a HEXFET Power MOSFET. Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF4905 HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF4905 absolute maximum ratings:(1)Continuous Drain Current, VGS @ -10V, at the conndition of ID @ TC = 25℃: the max value is -74A; (2)Continuous Drain Current, VGS @ -10V, at the conndition of ID @ TC = 100℃: the max value is -52A; (3)Pulsed Drain Current, IDM: the max value is -260A; (4)Power Dissipation, at the conndition of PD @TC = 25℃: the max value is 200W; (5)Linear Derating Factor: the max value is 1.3 W/℃; (6)Gate-to-Source Voltage, VGS: ± 20 V; (7)Single Pulse Avalanche Energy, EAS: the max value is 930mJ; (8)Avalanche Current, IAR: the max value is -38 A; (9)Repetitive Avalanche Energy, EAR: the max value is 20 mJ; (10)Peak Diode Recovery dv/dt, dv/dt: the max value is -5.0 V/ns; (11)Operating Junction and Storage Temperature Range, TJ/TSTG: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: the max value is 300 (1.6mm from case ); (13)Mounting torque, 6-32 or M3 screw: the max value is 10 lbf.in (1.1N.m).

Features

IRF4905 features:(1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)P-Channel; (7)Fully Avalanche Rated.