Product Summary

The BF998 is a silicon N_Channel MOSFET tetrode.

Parametrics

BF998 absolute maximum ratings: (1)Drain-source voltage VDS: 12 V; (2)Continuous drain current ID: 30 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10mA; (4)Total power dissipation: 200mA; (5)Storage temperature Tstg: -55 to 150 ℃; (6)Channel temperature Tch: 150℃.

Features

BF998 features: (1)Short-channel transistor with high S / C quality factor; (2)For low-noise, gain-controlled input stage up to 1 GHz.

Diagrams

BF998 power dissipation diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BF998
BF998

Other


Data Sheet

Negotiable 
BF998,215
BF998,215

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Data Sheet

0-1: $0.22
1-25: $0.19
25-100: $0.17
100-250: $0.12
BF998,235
BF998,235

NXP Semiconductors

Transistors RF MOSFET Small Signal Dual N-Channel 12V 30mA 200mW

Data Sheet

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7000-10000: $0.08
BF998...
BF998...

Other


Data Sheet

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BF998E6327
BF998E6327

Infineon Technologies

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Data Sheet

1-3000: $0.06
3000-6000: $0.06
6000-9000: $0.06
BF998R
BF998R

Other


Data Sheet

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BF998R,215
BF998R,215

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Data Sheet

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BF998WR,115
BF998WR,115

NXP Semiconductors

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Data Sheet

0-1: $0.13
1-25: $0.11
25-100: $0.10
100-250: $0.10