Product Summary
The BF998 is a silicon N_Channel MOSFET tetrode.
Parametrics
BF998 absolute maximum ratings: (1)Drain-source voltage VDS: 12 V; (2)Continuous drain current ID: 30 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10mA; (4)Total power dissipation: 200mA; (5)Storage temperature Tstg: -55 to 150 ℃; (6)Channel temperature Tch: 150℃.
Features
BF998 features: (1)Short-channel transistor with high S / C quality factor; (2)For low-noise, gain-controlled input stage up to 1 GHz.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BF998 |
Other |
Data Sheet |
Negotiable |
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BF998,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal N-CH DUAL GATE 12V VHF/UHF |
Data Sheet |
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BF998,235 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal Dual N-Channel 12V 30mA 200mW |
Data Sheet |
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BF998... |
Other |
Data Sheet |
Negotiable |
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BF998E6327 |
Infineon Technologies |
MOSFET N-CH 12V 200MA SOT-143 |
Data Sheet |
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BF998R |
Other |
Data Sheet |
Negotiable |
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BF998R,215 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE7 MOS-RFSS |
Data Sheet |
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BF998WR,115 |
NXP Semiconductors |
Transistors RF MOSFET Small Signal TAPE-7 MOS-RFSS |
Data Sheet |
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