Product Summary

The BF1212WR is an enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212WR is encapsulated in the SOT343R plastic package.

Parametrics

BF1212WR absolute maximum ratings: (1)drain-source voltage, VDS: 6V; (2)drain current, ID: 30mA; (3)total power dissipation, Ptot: 180mW; (4)Crss reverse transfer capacitance, f = 1 MHz: 15 30 fF; (5)F noise figure, f = 800 MHz: 1.1 to 1.8dB; (6)junction temperature, Tj: 150℃.

Features

BF1212WR features: (1)Short channel transistor with high forward transfer admittance to input capacitance ratio; (2)Low noise gain controlled amplifier; (3)Excellent low frequency noise performance; (4)Partly internal self-biasing circuit to ensure good; (5)cross-modulation performance during AGC and good; (6)DC stabilization.

Diagrams

BF1212WR Simplified outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BF1212WR,115
BF1212WR,115
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Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BF1201,215
BF1201,215
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0-1: $0.29
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Data Sheet
0-1: $0.15
1-25: $0.14
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BF1202,215
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Data Sheet
0-1: $0.29
1-25: $0.26
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BF1201WR,135
BF1201WR,135
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