(China (Mainland))
Product Summary
The 3SK318YB-TL-EQ is a silicon N-channel dual gate MOSFET and UHF RF amplifier.
Parametrics
3SK318YB-TL-EQ absolute maximum ratings: (1)Drain to source voltage, VDS: 6V; (2)Gate1 to source voltage, VG1S: ±6V; (3)Gate2 to source voltage, VG2S: ±6V; (4)Drain current, ID: 20mA; (5)Channel power dissipation, Pch: 100mW; (6)Channel temperature, Tch: 150℃; (7)Storage temperature, Tstg: –55 to +150℃.
Features
3SK318YB-TL-EQ features: (1)Low noise characteristics, (NF= 1.4 dB typ. at f= 900 MHz); (2)Excellent cross modulation characteristics; (3)Capable low voltage operation; +B= 5V.
Diagrams
 |
 3SK309 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
3SK317 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
3SK318 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
3SK319 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
3SK324 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
3SK323 |
Other |
|
Data Sheet |
Negotiable |
|
||||
