(China (Mainland))
Product Summary
The 2SK3018FPDT106 is a kind of transistor which belongs to N-channel silicon MOSFET.It can be used in interfacing and switching.It is available in taping package.
Parametrics
2SK3018FPDT106 absolute maximum ratings: (1)drain-cource voltage(VDSS) is 30 V; (2)gate-source voltage(VGSS) is ±20 V; (3)drain current for the type of continuous(ID) is 100 mA and for the type of pulsed(IDP) is 200 mA; (4)reverse drain current for the type of continuous(IDR) is 100 mA and for the type of pulsed(IDRP) is 200 mA; (5)total power dissipation(PD) is 200 mW; (6)channel temperature(TCh) is 150; (7)storage tempterature(TSTG) is from -55 to 150; (8)the maximum of the gate-source leakage is ±1 A at the condition of VGS is ±20 V and VDS is 0 V; (9)the minimum of the drain-source breakdown voltage is 30 V at ID is 10 A and VGS is 0 V; (10)the minimum of the gate threshold voltage is 0.8 V, the maximum is 1.5 V when VDs is 3 V and ID is 100 A; (11)reverse transfer capacitance is 4 pF at f is 1 MHz; (12)both the rise time and the turn-off delay time are 80 ns when ID is 10 mA and VGS is 5 V.
Features
2SK3018FPDT106 features: (1) low on-resistance; (2) fast switching speed; (3)low voltage drive (2.5 V) makes this device ideal for portable equipment; (4) easily designed drive circuits; (5) easy to parallel.
Diagrams
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