Product Summary

The 2SD1664T100R is one member of the 2SD1664 family which is designed as the medium power transistor (32V, 1A).

Parametrics

2SD1664T100R absolute maximum ratings: (1)collector-base voltage: 40 V;(2)collector-emitter voltage: 32 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 2 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 0.5 or 2 W.

Features

2SD1664T100R features: (1)Low VCE(sat). VCE(sat) = 0.15 V(Typ.) (IC / IB= 0.5 A / 50 mA); (2)High VCEO, VCEO=80V; (3)Complements the 2SB1132. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

Diagrams

2SD1664T100R External dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SD1664T100R
2SD1664T100R

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 32V 1A

Data Sheet

0-1: $0.33
1-25: $0.25
25-100: $0.18
100-500: $0.12
500-1000: $0.09
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