Product Summary

The 2SC2712-Y is an NPN silicon transistor.

Parametrics

2SC2712-Y absolute maximum ratings: (1)Collector to Base Voltage, VCBO: 60V; (2)Collector to Emitter Voltage, VCEO: 50V; (3)Emitter to Base Voltage, VEBO: 5V; (4)Collector current, IC: 150A; (5)Base current, IB: 30A; (6)Collector power dissipation, PC: 150A; (7)Junction Temperature, Tj: 125℃; (8)Storage Temperature Range, Tstg: -55 to +125℃.

Features

2SC2712-Y features: (1)High voltage and high current: VCEO = 50 V, IC = 150 mA (max); (2)Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.); (3)High hFE: hFE=70, 700; (4)Low noise: NF=1dB (typ.), 10dB (max).

Diagrams

2SC2712-Y package outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SC2712-Y
2SC2712-Y
Other

Data Sheet
Negotiable 
2SC2712-Y(T5L,F,T)
2SC2712-Y(T5L,F,T)
Toshiba (VA)
TRANS NPN 50V 150MA S-MINI
Data Sheet
1-10: $0.11
10-100: $0.08
100-250: $0.05
250-500: $0.04
500-1000: $0.03
2SC2712-Y(TLSPF,T)
2SC2712-Y(TLSPF,T)
Toshiba
Transistors Bipolar (BJT) AUDIO FREQ NPN TRAN 50V 0.15A 3-PIN
Data Sheet
0-1: $0.02
1-10: $0.02
10-100: $0.02
100-250: $0.01
2SC2712-YT5LFT
2SC2712-YT5LFT
Toshiba
Transistors Bipolar (BJT) x34 Small Signal Transistor
Data Sheet
Negotiable 
2SC2712-Y(TE85L,F)
2SC2712-Y(TE85L,F)
Toshiba
Transistors Bipolar (BJT) 150mA 50V
Data Sheet
0-1: $0.04
1-10: $0.04
10-100: $0.03
100-250: $0.02