Product Summary

The 2SC2712-GR is an NPN silicon transistor.

Parametrics

2SC2712-GR absolute maximum ratings: (1)Collector to Base Voltage, VCBO: 60V; (2)Collector to Emitter Voltage, VCEO: 50V; (3)Emitter to Base Voltage, VEBO: 5V; (4)Collector current, IC: 150A; (5)Base current, IB: 30A; (6)Collector power dissipation, PC: 150A; (7)Junction Temperature, Tj: 125℃; (8)Storage Temperature Range, Tstg: -55 to +125℃.

Features

2SC2712-GR features: (1)High voltage and high current: VCEO = 50 V, IC = 150 mA (max); (2)Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.); (3)High hFE: hFE=70, 700; (4)Low noise: NF=1dB (typ.), 10dB (max).

Diagrams

2SC2712-GR Outline Dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SC2712-GR
2SC2712-GR

Other


Data Sheet

Negotiable 
2SC2712-GR(T5L,F,T)
2SC2712-GR(T5L,F,T)


TRANS NPN 50V 150MA S-MINI

Data Sheet

Negotiable 
2SC2712-GR(TE85L,F
2SC2712-GR(TE85L,F

Toshiba

Transistors Bipolar (BJT) 150mA 50V

Data Sheet

0-1: $0.37
1-10: $0.26
10-100: $0.21
100-250: $0.16