(China (Mainland))
Product Summary
The 2SB1386T100R is a epitaxial planar type PNP silicon transistor.
Parametrics
2SB1386T100R absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 30V; (2)Collector-Emitter Voltage, VCEO: 20V; (3)Collector-Emitter Voltage, VEBO: 6V; (4)Collector Current (DC), IC(DC): 5A; (5)Collector Current (Pulse), IC(PULSE): 10A; (6)Collector Power Dissipation, PC: 0.5W; (7)Junction Temperature, TJ: 150℃; (8)Storage Temperature, TSTG: -55 to +150℃.
Features
2SB1386T100R features: (1)Excellent DC current gain characteristics; (2)Low VCE(SAT), VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A).
Diagrams
| Image | Part No | Mfg | Description |  |
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 2SB1386T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 20V 5A |
Data Sheet |
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2SB1000 |
Other |
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Data Sheet |
Negotiable |
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2SB1000A |
Other |
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Data Sheet |
Negotiable |
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2SB1001 |
Other |
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Data Sheet |
Negotiable |
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2SB1002 |
Other |
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Data Sheet |
Negotiable |
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2SB1005 |
Other |
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Data Sheet |
Negotiable |
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2SB1007 |
Other |
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Data Sheet |
Negotiable |
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